MICROSTRUCTURAL DEFECTS IN LASER RECRYSTALLIZED, GRAPHITE STRIP HEATER RECRYSTALLIZED AND BURIED OXIDE SILICON-ON-INSULATOR SYSTEMS - A STATUS-REPORT

被引：40

作者：

PINIZZOTTO, RF

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 63卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90168-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：559 / 582

页数：24

共 55 条

[1]

ALDERMAN J, COMMUNICATION

[2]

BIEGELSEN DK, 1982, 161ST EL SOC M MONTR, P229

[3]

BRACK K, 1975, I PHYS C SER, V23, P440

[4] SEEDED RECRYSTALLIZATION OF THICK POLYSILICON FILMS ON OXIDIZED 3-IN WAFERS [J].

CELLER, GK ;

ROBINSON, M ;

LISCHNER, DJ .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :99-101

[5]

CELLER GK, 1983, P MATER RES SOC, V13, P575

[6]

CHIKAWA J, 1981, P MATER RES SOC, V2, P317

[7]

DAS K, 1981, I PHYS C SER, V60, P307

[8] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474

[9] MEASUREMENT OF THE NEAR-SURFACE CRYSTALLINITY OF SILICON ON SAPPHIRE BY UV REFLECTANCE [J].

DUFFY, MT ;

CORBOY, JF ;

CULLEN, GW ;

SMITH, RT ;

SOLTIS, RA ;

HARBEKE, G ;

SANDERCOCK, JR ;

BLUMENFELD, M .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :10-18

[10] ZONE-MELTING RECRYSTALLIZATION OF 3-IN-DIAM SI FILMS ON SIO2-COATED SI SUBSTRATES [J].

FAN, JCC ;

TSAUR, BY ;

CHAPMAN, RL ;

GEIS, MW .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :186-188

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