MODIFIED SINGLE-PHASE LPE TECHNIQUE FOR IN1-XGAXAS1-YPY LASER STRUCTURES

被引:4
作者
NORDLAND, WA [1 ]
KAZARINOV, RF [1 ]
MERRITT, FR [1 ]
SAVAGE, A [1 ]
BONNER, WA [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1049/el:19840548
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:806 / 808
页数:3
相关论文
共 9 条
[1]   PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].
ANTYPAS, GA .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65
[2]   1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205
[3]   ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ ;
ROSSI, JA ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711
[4]   SINGLE-MODE CW RIDGE-WAVEGUIDE LASER EMITTING AT 1.55 MU-M [J].
KAMINOW, IP ;
NAHORY, RE ;
POLLACK, MA ;
STULZ, LW ;
DEWINTER, JC .
ELECTRONICS LETTERS, 1979, 15 (23) :763-765
[5]   NEAR-EQUILIBRIUM LPE GROWTH OF IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].
KAZARINOV, RF ;
NORDLAND, WA ;
WAGNER, WR ;
TEMKIN, H ;
MANCHON, DD .
JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) :235-238
[6]   GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J].
OE, K ;
SUGIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2003-2004
[7]   LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].
POLLACK, MA ;
NAHORY, RE ;
DEWINTER, JC ;
BALLMAN, AA .
APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316
[8]   GROWTH OF LATTICE-MATCHED INGAASP-INP DOUBLE-HETEROSTRUCTURES BY 2-PHASE SUPERCOOLED SOLUTION TECHNIQUE [J].
SAKAI, K ;
AKIBA, S ;
YAMAMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) :2043-2044
[9]   GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS [J].
SANKARAN, R ;
ANTYPAS, GA ;
MOON, RL ;
ESCHER, JS ;
JAMES, LW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :932-937