A CHARGE-INDUCED ABSORPTION-EDGE SHIFT IN CDS SEMICONDUCTOR-FILMS

被引：33

作者：

LIU, CY ^{[1
]}

BARD, AJ ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1989年 / 93卷 / 23期

关键词：

Light--Absorption - Semiconducting Films--Energy Gap;

D O I：

10.1021/j100360a002

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By application of either a negative or positive potential or sufficient magnitude across the interface between an evaporated CdS film and MeCN solution, a charge-induced absorption-edge shift toward the blue was observed. The blue shift is explained in terms of a Burstein shift i.e., an increase in the optical band gap because of population of the conduction band.

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页码：7749 / 7750

页数：2

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