STATUS AND TRENDS OF HEMT TECHNOLOGY

被引：1

作者：

MIMURA, T

NISHIUCHI, K

ABE, M

SHIBATOMI, A

KOBAYASHI, M

机构：

[1] Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1985年 / 1卷 / 05期

关键词：

CRYSTALS - Epitaxial Growth - INTEGRATED CIRCUITS; LSI;

D O I：

10.1016/S0749-6036(85)80001-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Status and trends in HEMT (High Electron Mobility Transistor) technology are described. Some topics concerned with achieving higher levels of integration and increasing microwave performance are discussed from viewpoints of materials, processing techniques and device structures. These are MBE-grown epitaxial materials with LSI quality, refined device structures facilitating control of device parameters, and interconnect consideration. Following these discussions, we report successful fabrication of a 4K-bit static RAM and an ultra low noise HEMT with 1. 08 dB noise figure at 12 GHz.

引用

页码：369 / 373

页数：5

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