BONDING IN SEMICONDUCTING AG6-CLUSTER COMPOUNDS - [AG6GE4P12]GE6, [AG6SN4P12]GE6, AND [AG6SN4P12]SI6

被引：10

作者：

BULLETT, DW ^{[1
]}

WITCHLOW, GP ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2429 / 2431

页数：3

共 8 条

[1]

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[2]

Henry N.F.M., 1952, INT TABLES XRAY CRYS, V1

[3]

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[4]

HONLE W, 1981, Z KRISTALLOGR, V153, P339

[5] OPTICAL AND ELECTRICAL-PROPERTIES OF THE SILVER CLUSTER COMPOUND (AG6GE4P12)GE6 [J].

KOHLER, K ;

QUEISSER, HJ ;

HONLE, W ;

VONSCHNERING, HG ;

BOHM, MC .

PHYSICAL REVIEW B, 1985, 31 (10) :6514-6520

[6] ELASTIC BEHAVIOR UNDER PRESSURE OF THE CLUSTER COMPOUND (AG6GE4P12)GE6 [J].

MACDONALD, JE ;

SAUNDERS, GA ;

YOGURTCU, YK ;

HONLE, W .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (08) :951-956

[7] INFRARED REFLECTIVITY OF AG6GE10P12 [J].

NEUMANN, H ;

RIEDE, V ;

SOBOTTA, H ;

OMAR, MS ;

PAMPLIN, BR .

SOLID STATE COMMUNICATIONS, 1985, 53 (02) :155-156

[8]

von Schnering H.G., 1976, REV CHIM MINER, V13, P71

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