MULTIPLE-SCATTERING CORRECTIONS IN DILUTED MAGNETIC SEMICONDUCTORS - A PLANE-WAVE EXPANSION

被引：18

作者：

SCALBERT, D ^{[1
]}

GHAZALI, A ^{[1
]}

BENOITLAGUILLAUME, C ^{[1
]}

机构：

[1] UNIV PARIS 06, F-75251 PARIS 05, FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.48.17752

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Energy levels of band edges in diluted magnetic semiconductors are calculated in the effective-mass approximation, retaining off-diagonal terms in the exchange interaction and using a plane-wave expansion. This model accounts qualitatively for the observed asymmetry in the splitting of the A exciton in a magnetic field in Cd1-xMnx S for which multiple-scattering corrections are expected to be important.

引用

页码：17752 / 17757

页数：6

共 16 条

[1]

Abramishvili V. G., 1984, Soviet Physics - Solid State, V26, P666

[2] EXCHANGE INDUCED BAND SPLITTING IN WIDE-GAP SEMIMAGNETIC SEMICONDUCTORS IN EXTERNAL-FIELD - 2ND ORDER CORRECTION [J].