THERMAL-BEHAVIOR OF POLYMER-DERIVED CERAMICS .1. SI-C AND SI-C-O SYSTEMS FROM BOTH COMMERCIAL AND NEW POLYCARBOSILANE (PCS) PRECURSORS

被引：36

作者：

DELVERDIER, O ^{[1
]}

MONTHIOUX, M ^{[1
]}

MOCAER, D ^{[1
]}

PAILLER, R ^{[1
]}

机构：

[1] UB1,SEP,COMPOSITES THERMOSTRUCTURAUX LAB,CNRS,UMR 47,F-33600 PESSAC,FRANCE

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1993年 / 12卷 / 01期

关键词：

D O I：

10.1016/0955-2219(93)90068-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si-C- and Si-C-O-based ceramics from new or commercial polymeric precursors are compared. The emphasis is upon the structural and textural features as observed by high-resolution transmission electron microscopy (HRTEM), and their evolution with an increasing heat-treatment temperature up to 1800-degrees-C. Specifically, the behavior of an increasing excess of carbon-with regard to the Si-C stoichiometry-is revealed, and the consequences on the nucleation and the growth of the SiC grains and the electrical properties are discussed.

引用

页码：27 / 41

页数：15

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