MISFIT DISLOCATIONS IN LATTICE-MISMATCHED EPITAXIAL-FILMS

被引:205
作者
HULL, R
BEAN, JC
机构
[1] AT&T Bell Laboratories, Murray Hill, NJ, 07974
关键词
MISFIT DISLOCATIONS; STRAINED LAYER; EPITAXY; LATTICE-MISMATCHED;
D O I
10.1080/10408439208244585
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detail. In addition, there is a brief review of the principal properties of dislocations in bulk semiconductors and an outline of existing models for strained layer stability.
引用
收藏
页码:507 / 546
页数:40
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