MISFIT DISLOCATIONS IN LATTICE-MISMATCHED EPITAXIAL-FILMS

被引：205

作者：

HULL, R

BEAN, JC

机构：

[1] AT&T Bell Laboratories, Murray Hill, NJ, 07974

来源：

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1992年 / 17卷 / 06期

关键词：

MISFIT DISLOCATIONS; STRAINED LAYER; EPITAXY; LATTICE-MISMATCHED;

D O I：

10.1080/10408439208244585

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detail. In addition, there is a brief review of the principal properties of dislocations in bulk semiconductors and an outline of existing models for strained layer stability.

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页码：507 / 546

页数：40

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