HALL INSULATOR IN A 2-DIMENSIONAL ELECTRON-SYSTEM IN SILICON IN THE EXTREME QUANTUM LIMIT

被引：7

作者：

KRAVCHENKO, SV

FURNEAUX, JE

PUDALOV, VM

机构：

[1] UNIV OKLAHOMA,DEPT PHYS & ASTRON,NORMAN,OK 73019

[2] TROITSK HIGH PRESSURE PHYS INST,TROITSK 142092,RUSSIA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.49.2250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report diagonal- and Hall resistance measurements of the localized two-dimensional electron system in silicon in the high-field extreme quantum limit. The Hall resistance has been found to be almost independent of temperature and close to its classical value, B/n(s)ec, while the diagonal resistivity diverges at T --> 0. There is no evidence for nonlocal resistance due to special conductivity paths. These results support existence of the recently predicted Hall insulator state in silicon in a high magnetic field.

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页码：2250 / 2252

页数：3

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