TRANSITION OF A SI-AS SOLUTION TO THE AMORPHOUS PHASE INDUCED BY PULSED-LASER QUENCHING

被引：9

作者：

BAERI, P

REITANO, R

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.39.13231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：13231 / 13240

页数：10

共 29 条

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[2]

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[3]

Baeri P., 1982, LASER ANNEALING SEMI

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[8] INFLUENCE OF DOPING ON THE LIQUID-AMORPHOUS TRANSITION INDUCED BY PICOSECOND LASER IRRADIATION OF SI [J].

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[9]

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[10] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].

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