ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS - COMMENT

被引：8

作者：

OHNO, T

YAMAGUCHI, E

机构：

[1] NTT Basic Research Laboratories, Musashino-shi

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.44.6527

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The prediction of Chadi and Chang [Phys. Rev. B 39, 10063 (1989)] that the DX center in GaAs is a negatively charged defect is investigated. It is found from ab initio self-consistent pseudopotential calculations that the proposed negatively charged center is a metastable state and not a ground state at hydrostatic pressures up to 60 kbar.

引用

页码：6527 / 6529

页数：3