SCHOTTKY BARRIERS ON P-TYPE GALLIUM-ARSENIDE PREPARED BY MOLECULAR-BEAM EPITAXY

被引：2

作者：

MISSOUS, M

RHODERICK, EH

SINGER, KE

机构：

[1] Univ of Manchester Inst of Science, & Technology, Manchester, Engl, Univ of Manchester Inst of Science & Technology, Manchester, Engl

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 05期

关键词：

D O I：

10.1049/el:19860165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

3

引用

收藏

页码：241 / 242

页数：2

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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1422 - 1433
[3] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT
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