NITROGEN-OXIDE SENSORS BASED ON THIN-FILMS OF BASNO3

被引：76

作者：

LAMPE, U

GERBLINGER, J

MEIXNER, H

机构：

[1] Siemens AG, Corporate Research and Development, Munich, D-81730

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 26卷 / 1-3期

关键词：

NITROGEN OXIDE SENSORS; BARIUM; TIN;

D O I：

10.1016/0925-4005(94)01565-Y

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A very promising sensor material to detect nitrogen oxide is BaSnO3. The mechanism of NO sensitivity of this metal oxide is supposed to be a surface reaction process. Thus to get a high gas sensitivity the NO elementary sensor is realized as a thin film. The sensitivity of the BaSnO3 thin films to NO is measured as a function of the temperature and the oxygen concentration. As the most important cross-sensitivities, the influence of humidity, methane, ammonia and CO on the sensor signal was examined. The NO sensitivity shows under dry conditions a maximum in the range 450-550 degrees C.

引用

页码：97 / 98

页数：2