DENSITY OF STATES OF AMORPHOUS HYDROGENATED SI

被引：5

作者：

LEMAIRE, P ^{[1
]}

GASPARD, JP ^{[1
]}

机构：

[1] IRSIA,BRUSSELS,BELGIUM

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814167

中图分类号：

学科分类号：

摘要：

引用

页码：765 / 768

页数：4

共 6 条

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[3]

Joannopoulos J., 1976, SOLID STATE PHYS, V31, P71

LEMAIRE, P ;

GASPARD, JP .

[5] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

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VONROEDERN, B ;

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SMITH, FW .

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