EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS

被引：10

作者：

CHEUNG, DT ^{[1
]}

SHEN, CC ^{[1
]}

PEARSON, GL ^{[1
]}

机构：

[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1063/1.321590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5226 / 5228

页数：3

共 10 条

[1] ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1373
[2] ALFEROV ZI, 1972, SOV PHYS SEMICOND+, V6, P310
[3] ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1234
[4] ALFEROV ZI, 1970, P INT C PHYS CHEM SE, V2, P7
[5] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[6] CASEY HC, 1975, POINT DEFECTS SOLIDS, V2
[7] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS
CHEUNG, DT
CHIANG, SY
PEARSON, GL
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 263 - 266
[8] SCANNING ELECTRON-MICROSCOPE CHARACTERIZATION OF GAP RED-EMITTING DIODES
HACKETT, WH
SAUL, RH
KAMMLOTT, GW
DIXON, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2857 - +
[9] N-N SEMICONDUCTOR HETEROJUNCTIONS
OLDHAM, WG
MILNES, AG
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132
[10] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION
WOMAC, JF
REDIKER, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4129 - &