EFFECTS OF DEEP FE ACCEPTORS ON THE IMPEDANCE OF A SEMI-INSULATING N-TYPE FE-DOPED INP SCHOTTKY-BARRIER

被引:1
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HATTORI, K
URAOKA, U
FUJII, T
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10.1063/1.336232
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O59 [应用物理学];
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页码:4626 / 4632
页数:7
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共 21 条
[1]   CHARACTERIZATION OF MULTIPLE DEEP LEVEL SYSTEMS IN SEMICONDUCTOR JUNCTIONS BY ADMITTANCE MEASUREMENTS [J].
BEGUWALA, M ;
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1974, 17 (02) :203-214
[2]  
BERMAN LS, 1971, SOV PHYS SEMICOND+, V4, P1291
[3]   PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP [J].
CHIAO, SH ;
ANTYPAS, GA .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :466-468
[4]   THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].
CRONIN, GR ;
HAISTY, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :874-877
[5]   AN ENERGY SCHEME FOR INTERPRETING DEEP-LEVEL PHOTOCONDUCTIVITY AND OTHER RECENT OPTICAL MEASUREMENT FOR FE-DOPED INP [J].
EAVES, L ;
SMITH, AW ;
WILLIAMS, PJ ;
COCKAYNE, B ;
MACEWAN, WR .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (33) :5063-5068
[6]   X-RAY-INVESTIGATION OF CRYSTAL DEFECTS IN CZOCHRALSKI GROWN INP SINGLE-CRYSTALS [J].
FRANZOSI, P ;
GHEZZI, C .
JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :591-600
[7]   STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J].
FUNG, S ;
NICHOLAS, RJ ;
STRADLING, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23) :5145-5155
[8]   DEEP TRAP LEVELS IN CDS SOLAR-CELLS OBSERVED BY CAPACITANCE MEASUREMENTS [J].
HMURCIK, L ;
KETELSEN, L ;
SERWAY, RA .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3839-3847
[9]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[10]   MIXED CONDUCTION IN CR-DOPED GAAS [J].
LOOK, DC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (12) :1311-1315