FABRICATION OF SILICON FIELD-EMISSION POINTS FOR VACUUM MICROELECTRONICS BY WET CHEMICAL ETCHING

被引：10

作者：

TRUJILLO, JT

HUNT, CE

机构：

[1] Dept. of Electr. Eng. and Comput. Sci., California Univ., Davis, CA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 03期

关键词：

D O I：

10.1088/0268-1242/6/3/014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of sharp silicon tips for field emission cathodes has been investigated using anisotropic and isotropic wet chemical etching techniques. Formulations of potassium hydroxide, water and alcohol are used as the anisotropic etchants. The effects of isopropyl, secondary butyl and tertiary butyl alcohols on tip formation are examined. An isotropic etchant using a mixture of hydrofluoric, nitric and acetic acids is also used to form similar cathode structures for comparison. The silicon needles formed are intended for use in vacuum microelectronic devices.

引用

页码：223 / 225

页数：3

共 5 条

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[3]

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[5]

Marcus RB, Ravi TS, Gmitter T, Chin K, Liu D, Orvis WJ, Ciarlo DR, Hunt CE, Trujillo J, Appl. Phys. Lett., 56, 3, (1990)

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