THE GEOMETRIC STRUCTURE OF INTRINSIC DEFECTS AT TIO2(110) SURFACES - AN STM STUDY

被引：110

作者：

FISCHER, S ^{[1
]}

MUNZ, AW ^{[1
]}

SCHIERBAUM, KD ^{[1
]}

GOPEL, W ^{[1
]}

机构：

[1] UNIV TUBINGEN,INST PHYS & THEORET CHEM,D-72076 TUBINGEN,GERMANY

来源：

SURFACE SCIENCE | 1995年 / 337卷 / 1-2期

关键词：

SCANNING TUNNELING MICROSCOPY; SURFACE DEFECTS; TITANIUM OXIDE;

D O I：

10.1016/0039-6028(95)00572-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on a scanning tunneling microscopy study of TiO2(110) surfaces. Different types of intrinsic defects are produced by a high-temperature treatment at T greater than or equal to 1070 K in UHV, i.e. (001) single-steps, (001) line defects, and oxygen vacancies occur as predominant types of defects. Atomically resolved STM images make it possible to determine their geometric structures. With additional input from voltage-dependent (STS) images, simple structural models are derived for electrostatically neutral (001) single-steps at TiO2(110) surfaces and for (001) line defects. The latter may formally be described by titanium vacancies and oxygen vacancies along the [001] direction.

引用

页码：17 / 30

页数：14

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