SPUTTERING TECHNIQUE FOR COATING INSIDE WALLS OF THROUGH-HOLES IN SUBSTRATES

被引:25
作者
VOSSEN, JL [1 ]
机构
[1] RCA,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 05期
关键词
D O I
10.1116/1.1318082
中图分类号
O59 [应用物理学];
学科分类号
摘要
By sputter-etching a substrate with through-holes while the substrate rests on a sputtering target, material from the target coats the inside walls of the through-holes without appreciably coating the plane surfaces. The deposition rate is greatest when the sputtering voltage is low ( less than 1 kV), and the pressure- and target-sputtering yield are high. The rate is nearly independent of the hole aspect ratio (ratio of diameter to depth) for ratios greater than 0. 3, but decreases rapidly for smaller ratios. The uniformity of the films thus deposited depends mainly on the smoothness of the through-hole walls.
引用
收藏
页码:875 / 877
页数:3
相关论文
共 3 条
  • [1] VOSSEN JL, 1970, RCA REV, V31, P293
  • [2] VOSSEN JL, 1971, J VAC SCI TECHNOL, V8, P12
  • [3] WEHNER GK, 1970, HDB THIN FILM TECHNO, pCH3