STUDIES OF FAR-INFRARED PROPERTIES OF THIN BISMUTH-FILMS ON BAF2 SUBSTRATE

被引：27

作者：

TAKAOKA, S

MURASE, K

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.54.2250

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2250 / 2256

页数：7

共 19 条

[1] QUANTUM SIZE EFFECT IN THIN BISMUTH-FILMS
ASAHI, H
HUMOTO, T
KAWAZU, A
[J]. PHYSICAL REVIEW B, 1974, 9 (08): : 3347 - 3356
[2] CRYSTAL CHEMISTRY + BAND STRUCTURES OF GROUP V SEMIMETALS + 4-6 SEMICONDUCTORS
COHEN, MH
FALICOV, LM
GOLIN, S
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (03) : 215 - &
[3] ELECTRON RELAXATION RATES IN BISMUTH AT MICROWAVE AND FAR-INFRARED FREQUENCIES
DREW, HD
STROM, U
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (26) : 1755 - &
[4] EDELMAN VS, 1966, SOV PHYS JETP-USSR, V22, P77
[5] GALVANOMAGNETIC STUDIES OF BISMUTH FILMS IN QUANTUM-SIZE-EFFECT REGION
GARCIA, N
STRONGIN, M
KAO, YH
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2029 - &
[6] DYNAMICAL CONDUCTIVITY AND PLASMON EXCITATION IN BI
GERLACH, E
GROSSE, P
RAUTENBERG, M
SENSKE, W
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 75 (02): : 553 - 558
[7] KOMNIK YF, 1982, SOLID STATE COMMUN, V44, P865, DOI 10.1016/0038-1098(82)90292-7
[8] THE ANTI-LOCALIZATION EFFECT IN BI THIN-FILMS
KOMORI, F
KOBAYASHI, S
SASAKI, W
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1983, 52 (02) : 368 - 371
[9] Lutskii V. N., 1970, Physica Status Solidi A, V1, P199, DOI 10.1002/pssa.19700010202
[10] LUTSKII VN, 1965, SOV PHYS JETP LETT, V2, P245