DOUBLE-HETEROSTRUCTURE PBSNTE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH CW OPERATION UP TO 114 K

被引：66

作者：

WALPOLE, JN ^{[1
]}

CALAWA, AR ^{[1
]}

HARMAN, TC ^{[1
]}

GROVES, SH ^{[1
]}

机构：

[1] MIT LINCOLN LAB,LEXINGTON,MA 02173

来源：

关键词：

D O I：

10.1063/1.88820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：552 / 554

页数：3

共 17 条

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[3] Harman T. C., 1973, J NONMETALS, V1, P183
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[5] LAWLESS JJ, UNPUBLISHED
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[7] GROWTH OF LARGE CRYSTALS OF (PB,GE)TE AND (PB,SN)TE
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PINNELL, JE
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 731 - 746
[8] HIGH CW OUTPUT POWER IN STRIPE-GEOMETRY PBS DIODE LASERS
RALSTON, RW
WALPOLE, JN
CALAWA, AR
HARMAN, TC
MCVITTIE, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1323 - 1325
[9] DOUBLE HETEROSTRUCTURE PB1-XSNXTE WAVEGUIDES AT 10.6 MUM
RALSTON, RW
WALPOLE, JN
HARMAN, TC
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[J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 64 - 66
[10] SLEGER KJ, 1973, J NONMETALS, V1, P297