EPITAXIAL LATERAL OVERGROWTH OF GAAS ON A SI SUBSTRATE

被引：117

作者：

UJIIE, Y

NISHINAGA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 03期

关键词：

D O I：

10.1143/JJAP.28.L337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L337 / L339

页数：3

共 12 条

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