ARSENIC PASSIVATION - A POSSIBLE REMEDY FOR MBE GROWTH-INTERRUPTION PROBLEMS

[1] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[2] EFFECT OF SUBSTRATE SURFACE-TREATMENT IN MOLECULAR-BEAM EPITAXY ON THE VERTICAL ELECTRONIC TRANSPORT THROUGH THE FILM-SUBSTRATE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 229 - 231

[3] CARRIER COMPENSATION AT INTERFACES FORMED BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6208 - 6213

[4] PROTECTION OF MOLECULAR-BEAM EPITAXY GROWN ALXGA1-XAS EPILAYERS DURING AMBIENT TRANSFER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 255 - 256

[5] Price G. L., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P259

[1] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[2] EFFECT OF SUBSTRATE SURFACE-TREATMENT IN MOLECULAR-BEAM EPITAXY ON THE VERTICAL ELECTRONIC TRANSPORT THROUGH THE FILM-SUBSTRATE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 229 - 231

[3] CARRIER COMPENSATION AT INTERFACES FORMED BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6208 - 6213

[4] PROTECTION OF MOLECULAR-BEAM EPITAXY GROWN ALXGA1-XAS EPILAYERS DURING AMBIENT TRANSFER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 255 - 256

[5] Price G. L., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P259