INSTRUMENTAL NEUTRON-ACTIVATION ANALYSIS OF PROCESSED SILICON

被引:10
作者
KEENAN, JA
GNADE, BE
WHITE, JB
机构
[1] Texas Instruments Inc, Materials, Science Lab, Dallas, TX, USA, Texas Instruments Inc, Materials Science Lab, Dallas, TX, USA
关键词
D O I
10.1149/1.2114326
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
SEMICONDUCTING SILICON
引用
收藏
页码:2232 / 2236
页数:5
相关论文
共 13 条
[2]  
DECORTE F, 1969, J RADIOANAL CHEM, V3, P205
[3]  
FEWER DR, 1967, AS306023723RADC CONT
[4]   REACTOR NEUTRON ACTIVATION ANALYSIS BY SINGLE COMPARATOR METHOD [J].
GIRARDI, F ;
GUZZI, G ;
PAULY, J .
ANALYTICAL CHEMISTRY, 1965, 37 (09) :1085-&
[5]  
KANE PF, 1970, CHARACTERIZATION SEM, P202
[6]  
KEENAN JA, 1971, CHEM INSTRUM, V3, P125
[7]  
KERN W, 1970, RCA REV, V31, P234
[8]   METAL IMPURITIES NEAR THE SIO2-SI INTERFACE [J].
OHSAWA, A ;
HONDA, K ;
TOYOKURA, N .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2964-2969
[9]   DETECTION LIMITS FOR GAMMA-RAY SPECTRAL ANALYSIS [J].
ROGERS, VC .
ANALYTICAL CHEMISTRY, 1970, 42 (07) :807-&
[10]   A NEUTRON-ACTIVATION ANALYSIS STUDY OF THE SOURCES OF TRANSITION GROUP METAL CONTAMINATION IN THE SILICON DEVICE MANUFACTURING PROCESS [J].
SCHMIDT, PF ;
PEARCE, CW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :630-636