BREAKDOWN, STEADY-STATE, AND DECAY REGIMES IN PULSED OXYGEN HELICON DIFFUSION PLASMAS

被引:32
作者
CHARLES, C
BOSWELL, RW
机构
[1] AUSTRALIAN NATL UNIV,SCH PHYS SCI & ENGN,PLASMA RES LAB,CANBERRA,ACT 0200,AUSTRALIA
[2] INST MAT NANTES,PLASMAS & COUCHES MINCES LAB,CNRS,UMR 110,F-44072 NANTES,FRANCE
关键词
D O I
10.1063/1.360335
中图分类号
O59 [应用物理学];
学科分类号
摘要
Continuous and pulsed oxygen plasmas have been created in a helicon diffusion reactor used for the deposition of silicon dioxide films. An energy selective mass spectrometer and a Langmuir probe attached to the wall of the silica-covered aluminum diffusion chamber below the source have been used to characterize the plasma [ion energy distribution function (IEDF), plasma potential, floating potential, plasma density]. The ion flux can be significantly modified by pulsing the discharge. In the continuous case, the IEDF of the O+2 ions escaping from the plasma to the sidewalls of the chamber consists of a single peak at an energy corresponding to the plasma potential in the chamber (≊32 V). In the pulsed case, the IEDF exhibits two additional peaks at high (≊60 eV) and low (≊15 eV) energy as a result of different states of the plasma during the pulse period: three regimes corresponding to the plasma breakdown, steady state, and decay have been observed and characterized. The time decay of the fundamental mode of diffusion in the post-discharge was measured and calculated (about 1 ms). The breakdown regime is highly dependent on the state of the plasma at the end of the post-discharge. © 1995 American Institute of Physics.
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页码:766 / 773
页数:8
相关论文
共 17 条
[1]  
Boswell R. W., 1970, Physics Letters A, V33, P457, DOI 10.1016/0375-9601(70)90606-7
[2]   ETCHING IN A PULSED PLASMA [J].
BOSWELL, RW ;
PORTEOUS, RK .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3123-3129
[3]  
BOSWELL RW, 1984, PLASMA PHYS CONTR F, V26, P1147, DOI 10.1088/0741-3335/26/10/001
[4]   MULTIPOLE CONFINED DIFFUSION PLASMA PRODUCED BY 13.56 MHZ ELECTRODELESS SOURCE [J].
BOSWELL, RW ;
PERRY, AJ ;
EMAMI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06) :3345-3350
[5]   LARGE VOLUME, HIGH-DENSITY RF INDUCTIVELY COUPLED PLASMA [J].
BOSWELL, RW ;
PORTEOUS, RK .
APPLIED PHYSICS LETTERS, 1987, 50 (17) :1130-1132
[6]   SIMULATION OF PULSED ELECTROPOSITIVE AND ELECTRONEGATIVE PLASMAS [J].
BOSWELL, RW ;
VENDER, D .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1991, 19 (02) :141-143
[7]  
BOSWELL RW, IN PRESS PLASMA SOUR
[8]  
BOSWELL RW, 1992, IEEE T PLASMA SCI, V20, P141
[9]   CHARACTERIZATION OF SILICON DIOXIDE FILMS DEPOSITED AT LOW-PRESSURE AND TEMPERATURE IN A HELICON DIFFUSION REACTOR [J].
CHARLES, C ;
GIROULTMATLAKOWSKI, G ;
BOSWELL, RW ;
GOULLET, A ;
TURBAN, G ;
CARDINAUD, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (06) :2954-2963
[10]   MEASUREMENT AND MODELING OF ION ENERGY-DISTRIBUTION FUNCTIONS IN A LOW-PRESSURE ARGON PLASMA DIFFUSING FROM A 13.56 MHZ HELICON SOURCE [J].
CHARLES, C ;
BOSWELL, RW ;
PORTEOUS, RK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (02) :398-403