SIMULATION OF SUBMICRON GMR MEMORY CELLS

被引：3

作者：

BEECH, RS

POHM, AV

DAUGHTON, JM

机构：

[1] Nonvolatile Electronics, Inc., Eden Prairie, MN 55344

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1995年 / 31卷 / 06期

关键词：

D O I：

10.1109/20.490328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A program has been developed for simulating sub-micron GMR memory cells. The simulation program is based on a two dimensional micro-magnetic equation; exchange forces, Important at these dimensions, are included in the calculations. Simulation results are used to estimate the resistance change and required switching fields for 0.2 mu m by 0.7 mu m memory cells. The calculated values, Delta R of 0.028 Omega and word field of 1500 Oe for switching, closely approximate the measured values of 0.015 Omega to 0.03 delta and about 1700 Oe.

引用

页码：3203 / 3205

页数：3