CONSTANT-PRESSURE SPECIFIC-HEAT TO HEMISPHERICAL TOTAL EMISSIVITY RATIO FOR UNDERCOOLED LIQUID NICKEL, ZIRCONIUM, AND SILICON

Radiative cooling curves of nickel, zirconium, and silicon melts that were obtained using the high-temperature, high-vacuum electrostatic levitator (HTHVESL) have been analyzed to determine the ratio between the constant-pressure specific heat and the hemispherical total emissivity, c(p)(T)/epsilon(T)(T). This ratio determined over a wide liquid temperature range for each material allows us to determine c(p)(T) if epsilon(T)(T) is known or vice versa. Following the recipe, the hemispherical total emissivities for each sample at its melting temperature, epsilon(T)(T-m), have been determined using c(p)(T-m) values available in the literature. They are 0.15, 0.29, and 0.17, for Ni, Zr, and Si, respectively.