THE BASE CURRENT RECOMBINING AT THE OXIDIZED SILICON SURFACE

被引：20

作者：

HILLEN, MW ^{[1
]}

HOLSBRINK, J ^{[1
]}

机构：

[1] GRONINGEN STATE UNIV,DEPT APPL PHYS,9747 AG GRONINGEN,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 05期

关键词：

D O I：

10.1016/0038-1101(83)90102-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：453 / 463

页数：11

相关论文

共 28 条

[1] INJECTION MODEL - STRUCTURE-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL)
BERGER, HH
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 218 - 227
[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
THOMAS, RE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[3] ELECTRICAL CHARACTERISTICS OF SIO2-SI INTERFACE NEAR MIDGAP AND IN WEAK INVERSION
COOPER, JA
SCHWARTZ, RJ
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 641 - 654
[4] DEGRAAFF HC, COMMUNICATION
[5] METHOD FOR CHARACTERIZATION OF P+-N-N+ DIODES USING DC MEASUREMENTS
ELSAID, MH
ROULSTON, DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (12) : 1365 - 1368
[6] SURFACE RECOMBINATION IN SEMICONDUCTORS
FITZGERALD, DJ
GROVE, AS
[J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +
[7] GRIMBERGEN CA, 1977, THESIS U GRONINGEN
[8] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[9] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +
[10] HALBO L, 1979, 9TH EUR SOL ST DEV R