OPTICAL NONLINEARITY AND BISTABILITY IN SILICON

被引：24

作者：

EICHLER, HJ

BRAND, T

GLOTZ, M

SMANDEK, B

机构：

[1] Technische Univ Berlin, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 150卷 / 02期

关键词：

Infrared Radiation--Nonlinear Optical Effects - Laser Beams--Effects - Lasers; Solid State - Light--Nonlinear Optical Effects - Optical Devices--Switching;

D O I：

10.1002/pssb.2221500258

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The large number of nonlinear optical effects observed in silicon is referenced. Special emphasis is given to laser-induced absorption and refraction due to free-carrier generation and optical heating produced by Nd:YAG-laser at 1.06 μm. Nonlinear silicon etalons exhibit high-order optical bistability. Switching powers down to 1 mw are obtained with the injection of an additional photocurrent. Two-wave mixing is discussed as an alternative switching scheme.

引用

页码：705 / 718

页数：14

共 124 条

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