LOW-FIRING, TEMPERATURE-STABLE DIELECTRIC COMPOSITIONS BASED ON BISMUTH NICKEL ZINC NIOBATES

Low‐sintering dielectric materials with small temperature co‐efficients were developed. The newly developed materials are based on the Bi2(ZnNb2)O9 and Bi3(Ni2Nb)O9 system with a bismuth‐layered crystal structure. Preliminary results show that these materials have relatively large dielectric constants of 80 to 100, small temperature coefficients of ≤20 × 10−6/°C, and relatively large Q values of 2000 to 3000. Furthermore, these materials can be sintered at temperatures ranging from 850° to 950°C, and these low sintering temperatures might permit the use of a less expensive silver electrode. These materials compare favorably with the conventional NPO (small temperature coefficient) dielectric materials based on MgTiO3. Copyright © 1990, Wiley Blackwell. All rights reserved