BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS

[1] CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1853 - 1866

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[4] BARAFF GA, 1981, DEFECTS RAD EFFECTS

[5] NORM-CONSERVING PSEUDOPOTENTIALS [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1494 - 1497

[6] KRAUT EA, 1984, J VAC SCI TECHNOL B, V2, P209

[7] Kroger F A., 1964, CHEM IMPERFECT CRYST

[8] Lagowski J., 1985, Thirteenth International Conference on Defects in Semiconductors, P73

[9] LAGOWSKI J, 1982, IOP C SERIES, V65

[10] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429

[1] CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1853 - 1866

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[4] BARAFF GA, 1981, DEFECTS RAD EFFECTS

[5] NORM-CONSERVING PSEUDOPOTENTIALS [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1494 - 1497

[6] KRAUT EA, 1984, J VAC SCI TECHNOL B, V2, P209

[7] Kroger F A., 1964, CHEM IMPERFECT CRYST

[8] Lagowski J., 1985, Thirteenth International Conference on Defects in Semiconductors, P73

[9] LAGOWSKI J, 1982, IOP C SERIES, V65

[10] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429