MINIMIZATION OF X-RAY MASK DISTORTION BY 2-DIMENSIONAL FINITE-ELEMENT METHOD SIMULATION

被引：5

作者：

KISHIMOTO, A

KUNIYOSHI, S

SAITO, N

SOGA, T

MOCHIJI, K

KIMURA, T

机构：

[1] HITACHI LTD,CTR SEMICOND DESIGN & DEV,KODAIRA,TOKYO,JAPAN

[2] HITACHI LTD,MECH ENGN RES LAB,THUCHIURA,IBARAKI,JAPAN

[3] HITACHI LTD,OME WORKS,OME,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

Absorber stress; Distortion; Finite element method; Simulation; Two-dimensional; X-ray mask;

D O I：

10.1143/JJAP.29.2203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square windows can be minimized by reducing the pattern length. In addition, it is found that the maximum distortion is virtually the same regardless of the number of LSI chips within the square window mask. © 1990 IOP Publishing Ltd.

引用

页码：2203 / 2206

页数：4