Electrochemical investigation of the gallium nitride-aqueous electrolyte interface

被引：109

作者：

Kocha, SS ^{[1
]}

Peterson, MW ^{[1
]}

Arent, DJ ^{[1
]}

Redwing, JM ^{[1
]}

Tischler, MA ^{[1
]}

Turner, JA ^{[1
]}

机构：

[1] ADV TECHNOL MAT INC,DANBURY,CT 06810

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 12期

关键词：

D O I：

10.1149/1.2048511

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

GaN (E(g) = similar to 3.4 eV) was photoelectrochemically characterized and the energetic position of its bandedges determined with respect to SHE. Electrochemical impedance spectroscopy was employed to analyze the interface, determine the space charge layer capacitance, and, subsequently obtain the flatband potential of GaN in different aqueous electrolytes. The flatband potential of GaN varied at an approximately Nernstian rate in aqueous buffer electrolytes of different pHs indicating acid-base equilibria at the interface.

引用

页码：L238 / L240

页数：3

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