PHOTOLUMINESCENCE IN AMORPHOUS SILICON

被引：69

作者：

ENGEMANN, D ^{[1
]}

FISCHER, R ^{[1
]}

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,D-3550 MARBURG,FED REP GER

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 79卷 / 01期

关键词：

D O I：

10.1002/pssb.2220790120

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：195 / 202

页数：8

共 11 条

[1]

Davis E. A., 1970, Journal of Non-Crystalline Solids, V4, P107, DOI 10.1016/0022-3093(70)90026-8

[2]

Engemann D., 1974, AMORPHOUS LIQUID SEM, P947

[3]

ENGEMANN D, 1974, 12TH P INT C PHYS SE, P1042

[4]

ENGEMANN D, 1976, P AIP C STRUCTURE EX, P37

[5] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

LECOMBER, PG ;

SPEAR, WE .

PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&

[6]

Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[7] Initial recombination of ions [J].

Onsager, L .

PHYSICAL REVIEW, 1938, 54 (08) :554-557

[8] ONSAGER MECHANISM OF PHOTOGENERATION IN AMORPHOUS SELENIUM [J].

PAI, DM ;

ENCK, RC .

PHYSICAL REVIEW B, 1975, 11 (12) :5163-5174

[9]

Smith J.E., 1972, J NON-CRYST SOLIDS, V8-10, P179, DOI [10.1016/0022-3093(72)90133-0, DOI 10.1016/0022-3093(72)90133-0]

[10] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].

SPEAR, WE ;

LOVELAND, RJ ;

ALSHARBA.A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) :410-422

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