ELECTRON FIELD-EMISSION THROUGH A VERY THIN OXIDE LAYER

被引:31
作者
YANG, G
CHIN, KK
MARCUS, RB
机构
[1] NEW JERSEY INST TECHNOL,DEPT PHYS,NEWARK,NJ 07102
[2] BELL COMMUN RES INC,RED BANK,NJ 07701
关键词
11;
D O I
10.1109/16.88528
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Field emission of an emitter covered with a very thin oxide layer is modeled and calculated numerically. The additional barrier due to the oxide layer is included in the tunneling problem by using the standard WKB method. The following physical parameters are considered: the oxide barrier height, the oxide conduction band-edge electron effective mass, and the oxide dielectric constant. Compared with the Fowler-Nordheim equation, which was derived for a clean metallic emitter, the calculation of this work shows a reduction of the emission current density from an emitter covered with an oxide layer a few monolayers thick. Strikingly, after reaching a minimum emission current density, the emission increases when the thickness of the oxide layer increases further. Finally, the emission current density is saturated and stabilized.
引用
收藏
页码:2373 / 2376
页数:4
相关论文
共 11 条
[1]   DEMONSTRATION OF LOW-VOLTAGE FIELD-EMISSION [J].
ADLER, EA ;
BARDAI, Z ;
FORMAN, R ;
GOEBEL, DM ;
LONGO, RT ;
SOKOLICH, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2304-2308
[2]  
ALLEN PC, 1989, VACUUM MICROELECTRON, P17
[3]  
CHIN KK, IN PRESS
[4]  
CHYNOWETH AG, 1959, PROG SEMICOND, V4, P97
[5]   EMISSION PROPERTIES OF SPINDT-TYPE COLD CATHODES WITH DIFFERENT EMISSION CONE MATERIAL [J].
DJUBUA, BC ;
CHUBUN, NN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2314-2316
[6]  
HOWELL DF, 1989, VACUUM MICROELECTRON, P81
[7]  
LEE RA, 1989, VACUUM MICROELECTRON, P105
[8]   EFFECT OF ORGANIC CONTAMINANTS ON THE OXIDATION-KINETICS OF SILICON AT ROOM-TEMPERATURE [J].
LICCIARDELLO, A ;
PUGLISI, O ;
PIGNATARO, S .
APPLIED PHYSICS LETTERS, 1986, 48 (01) :41-43
[9]   ATOMICALLY SHARP SILICON AND METAL FIELD EMITTERS [J].
MARCUS, RB ;
RAVI, TS ;
GMITTER, T ;
BUSTA, HH ;
NICCUM, JT ;
CHIN, KK ;
LIU, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2289-2293
[10]   OPERATION OF TUNNEL-EMISSION DEVICES [J].
MEAD, CA .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :646-&