ENERGY-LEVELS IN QUANTUM WIRES WITH FINITE BARRIER POTENTIAL

被引:15
作者
NAG, BR
GANGOPADHYAY, S
机构
[1] Institute of Radio Physics and Electronics, Calcutta University, Sisir Mitra Bhavan
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1993年 / 179卷 / 02期
关键词
D O I
10.1002/pssb.2221790221
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Formulae are derived for the calculation of the energy eigenvalues in cylindrical and elliptic quantum wires with finite potential barriers. Calculated values are given for quantum wires of the Ga0.47In0.53As/InP system and experimental results are explained.
引用
收藏
页码:463 / 471
页数:9
相关论文
共 14 条
[1]  
Abramowitz M, 1964, HDB MATH FUNCTIONS, P722
[2]  
ASAHI H, 1991, J VACUUM SCI TECHN B, V9, P2683
[3]   EFFECTS OF TWO-DIMENSIONAL CONFINEMENT ON THE OPTICAL-PROPERTIES OF INGAAS/INP QUANTUM WIRE STRUCTURES [J].
GERSHONI, D ;
TEMKIN, H ;
DOLAN, GJ ;
DUNSMUIR, J ;
CHU, SNG ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1988, 53 (11) :995-997
[4]  
KOHN W, 1957, SOLID STATE PHYS, V5, P274
[5]  
MCLACHLAN NW, 1951, THEORY APPLICATION M
[6]   BOUNDARY-CONDITIONS FOR THE HETEROJUNCTION INTERFACES OF NONPARABOLIC SEMICONDUCTORS [J].
NAG, BR .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (08) :4623-4625
[7]  
NAG BR, 1980, ELECTRON TRANSPORT C, P62
[8]  
NAG BR, 1991, APPL PHYS LETT, V58, P1057
[9]   CLEAR ENERGY-LEVEL SHIFT IN ULTRANARROW INGAAS/INP QUANTUM-WELL WIRES FABRICATED BY REVERSE MESA CHEMICAL ETCHING [J].
NOTOMI, M ;
NAGANUMA, M ;
NISHIDA, T ;
TAMAMURA, T ;
IWAMURA, H ;
NOJIMA, S ;
OKAMOTO, M .
APPLIED PHYSICS LETTERS, 1991, 58 (07) :720-722
[10]   TOWARD QUANTUM WELL WIRES - FABRICATION AND OPTICAL-PROPERTIES [J].
PETROFF, PM ;
GOSSARD, AC ;
LOGAN, RA ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1982, 41 (07) :635-638