PREPARATION OF MGO THIN-FILMS BY RF MAGNETRON SPUTTERING

被引：33

作者：

KANEKO, Y ^{[1
]}

MIKOSHIBA, N ^{[1
]}

YAMASHITA, T ^{[1
]}

机构：

[1] NAGAOKA UNIV TECHNOL,DEPT ELECTR,NAGAOKA 9402,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 05期

关键词：

MGO THIN FILMS; SPUTTERING; PREFERRED ORIENTATION; IMPURITY; HYDROXIDE;

D O I：

10.1143/JJAP.30.1091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgO thin films were prepared on Si(100) substrates by RF magnetron sputtering using a Mg, or MgO target. The preferred orientation of MgO thin films using a Mg target was transformed from a (200) plane to a (111) plane as a function of substrate temperature. The preferred orientation of MgO thin films using a MgO target was observed only in the (200) plane.

引用

页码：1091 / 1092

页数：2

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