ELECTRIC-FIELD-INDUCED ABSORPTION CHANGES IN TRIANGULAR QUANTUM-WELLS GROWN BY PULSED-BEAM MOLECULAR-BEAM-EPITAXY TECHNIQUE

被引：32

作者：

LAW, KK

YAN, RH

GOSSARD, AC

MERZ, JL

机构：

[1] Electrical and Computer Engineering Department, University of California, Santa Barbara

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 10期

关键词：

D O I：

10.1063/1.345120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an observation of electric-field-induced excitonic quenching in GaAs/AlGaAs triangular quantum wells, grown by pulsed-beam molecular-beam- epitaxy technique. We have measured photocurrent spectra for both symmetric and asymmetric triangular quantum wells as a function of electric field. In both cases, at the ground-state exciton energy, we observed significant electroabsorption changes that were associated with the vanishing of sharp exciton resonances when the triangular quantum-well structures were electrically switched to systems with no quantum confinement for one or both types of carriers.

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页码：6461 / 6465

页数：5

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