A PHYSICAL-MECHANISM OF CURRENT-INDUCED RESISTANCE DECREASE IN HEAVILY DOPED POLYSILICON RESISTORS

被引：32

作者：

KATO, K

ONO, T

AMEMIYA, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 08期

关键词：

D O I：

10.1109/T-ED.1982.20850

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1156 / 1161

页数：6

共 11 条

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