TEMPERATURE-DEPENDENCE OF RESISTIVITY AND HALL-COEFFICIENT OF THIN BISMUTH FILM

被引：12

作者：

HSU, LS

CHANG, YY

YOUNG, CS

TSENG, PK

机构：

[1] NATL TAIWAN NORM UNIV,DEPT PHYS,TAIPEI,TAIWAN

[2] NATL TAIWAN UNIV,DEPT PHYS,TAIPEI,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.323022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2359 / 2363

页数：5

共 10 条

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[4] ELECTRICAL TRANSPORT PROPERTIES OF THIN BISMUTH FILMS [J].

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[5]

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[6] FROZEN-IN DEFECTS IN BISMUTH IN RELATION TO ITS MAGNETORESISTIVITY AND THERMOELECTRIC POWER [J].

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[8]

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[9]

TSENG PK, UNPUBLISHED

[10] SMALL-FIELD GALVANOMAGNETIC TENSOR OF BISMUTH AT 4.2 DEGREES K [J].

ZITTER, RN .

PHYSICAL REVIEW, 1962, 127 (05) :1471-&

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