LOW-NOISE OPERATION IN BURIED-CHANNEL MOSFETS

被引:21
作者
WATANABE, T
机构
关键词
D O I
10.1109/EDL.1985.26140
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:317 / 319
页数:3
相关论文
共 6 条
[1]   NOISE IN BURIED CHANNEL CHARGE-COUPLED-DEVICES [J].
BRODERSEN, RW ;
EMMONS, SP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) :147-155
[2]  
GRAY PR, 1980, ANALOG MOS INTEGRATE, P28
[3]  
GUNSAGER KC, 1973, DEC IEDM, P21
[5]   SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET [J].
KAMATA, T ;
TANABASHI, K ;
KOBAYASHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) :1127-1133
[6]  
TROUTMAN RP, 1974, DEC IEDM, P43