THEORETICAL-ANALYSIS OF GAIN SATURATION COEFFICIENTS IN INGAAS/ALGAAS STRAINED LAYER QUANTUM-WELL LASERS

被引：20

作者：

SEKI, S ^{[1
]}

SOTIRELIS, P ^{[1
]}

HESS, K ^{[1
]}

YAMANAKA, T ^{[1
]}

YOKOYAMA, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 18期

关键词：

D O I：

10.1063/1.108302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The gain saturation coefficient epsilon of InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs) is calculated as a function of strain from intrasubband relaxation times. The intrasubband relaxation times are in turn obtained within the random phase approximation (RPA) including carrier-carrier as well as carrier-polar optical phonon interactions. The band structures are included by using the Luttinger-Kohn Hamiltonian [Phys. Rev. 97, 869 (1955)] and a multiband effective mass equation. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to a corresponding increase of the intrasubband relaxation time.

引用

页码：2147 / 2149

页数：3

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