LATERAL-MODE ANALYSIS OF BURIED HETEROSTRUCTURE DIODE-LASERS BY THE FINITE-ELEMENT METHOD

被引:28
作者
HAYATA, K
KOSHIBA, M
SUZUKI, M
机构
[1] Hokkaido Univ, Sapporo, Jpn, Hokkaido Univ, Sapporo, Jpn
关键词
MATHEMATICAL TECHNIQUES - Finite Element Method - SEMICONDUCTING GALLIUM COMPOUNDS - Applications - SEMICONDUCTING INDIUM COMPOUNDS - Applications - WAVEGUIDES; OPTICAL; -; Analysis;
D O I
10.1109/JQE.1986.1073060
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The vectorial and the approximate scalar finite-element methods based on a Galerkin procedure are formulated for the analysis of the waveguides composed of active or lossy media. The accuracy of the effective refractive index method, which has been widely used, is investigated in detail and its limitations are indicated. The modal gain and the difference of modal gain between the fundamental and the higher order modes are evaluated for GaInAsP/InP buried heterostructure diode lasers. The results, indicate that the finite-method, especially the approximate scalar version, is useful for lateral mode analysis of diode lasers, and for device simulation.
引用
收藏
页码:781 / 788
页数:8
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