ELECTRONIC TRANSPORT PHENOMENA OF LA2/3+XTIO3-DELTA (X-LESS-THAN-0.2) - METAL-NONMETAL TRANSITION BY ELECTRON DOPING

被引:42
作者
KIM, IS [1 ]
NAKAMURA, T [1 ]
INAGUMA, Y [1 ]
ITOH, M [1 ]
机构
[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,NAGATSUTA 4259,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
关键词
D O I
10.1006/jssc.1994.1372
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Carriers were introduced into La2/3TiO3, an insulator with double perovskite structure having an A-site vacancy, by a hydrogen reduction, and their electronic transport phenomena and crystal structure were studied. The lightly doped samples showed semiconducting behavior, while the heavily doped samples showed metallic conductivity. This carrier-concentration-dependent metal-nonmetal transition has been found at 3d electron density of 0.33 per formula unit with simultaneous occurrence of a crystal symmetry change from P4/mmm to Pnma. The electronic state of the La2/3+xTiO3-delta system was characterized by measuring the resistivity, the Seebeck coefficient, and the magnetic susceptibility. (C) 1994 Academic Press, Inc.
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页码:281 / 288
页数:8
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