GA-AS LIQUIDUS AT TEMPERATURES BELOW 650-DEGREES-C

被引：10

作者：

DEWINTER, JC

POLLACK, MA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.335913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2410 / 2412

页数：3

相关论文

共 10 条

[1] QUANTITATIVE FITS TO LIQUIDUS LINE AND HIGH-TEMPERATURE THERMODYNAMIC DATA FOR INSB, GASB, INAS, AND GAAS
BREBRICK, RF
[J]. METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1977, 8 (03): : 403 - 415
[2] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS
HALL, RN
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 385 - 388
[3] HSIEH JJ, 1974, UNPUB LINCOLN LABORA, V3, P25
[4] GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS1-XSBX
NAHORY, RE
POLLACK, MA
DEWINTER, JC
WILLIAMS, KM
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1607 - 1614
[5] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INXGA1-XAS
NAHORY, RE
POLLACK, MA
DEWINTER, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 775 - 782
[6] Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39
[7] Panish M.B., 1970, J CHEM THERMODYN, V2, P299, DOI 10.1016/0021-9614(70)
[8] PHASE EQUILIBRIA IN SYSTEM AL-GA-AS-SN AND ELECTRICAL PROPERTIES OF SN-DOPED LIQUID-PHASE EPITAXIAL ALXGA1-XAS
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2667 - 2675
[9] Shunk F. A., 1969, CONSTITUTION BINAR S
[10] PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS
THURMOND, CD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) : 785 - &