SB-SURFACTANT-MEDIATED GROWTH OF SI/SI1-YCY SUPERLATTICES BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

PETTERSSON, PO ^{[1
]}

AHN, CC ^{[1
]}

MCGILL, TC ^{[1
]}

CROKE, ET ^{[1
]}

HUNTER, AT ^{[1
]}

机构：

[1] HUGHES RES LABS, MALIBU, CA 90265 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 17期

关键词：

D O I：

10.1063/1.114448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si/Si0.97C0.03 superlattices were grown on Si(001) substrates by. molecular beam epitaxy (MBE) to study the use of Sb as a surfactant during Si1-yCy growth. In situ reflection high energy electron diffraction (RHEED) shows that while carbon easily disrupts the two-dimensional growth of homoepitaxial Si, such disruption is suppressed for layers grown on Sb-terminated Si(001) surfaces. Cross-sectional transmission electron microscopy (TEM) reveals that for samples grown without the use of Sb, the Si/Si0.97C0.03 interfaces (Si0.97C0.03 on Si) were much more abrupt than Si0.97C0.03/Si interfaces. In the case of Sb-mediated growth, differences in abruptness between the two types of interfaces were not readily observable. (C) 1995 American Institute of Physics.

引用

页码：2530 / 2532

页数：3

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