HIGH-RESISTIVITY IN P-TYPE INP BY DEUTERON BOMBARDMENT

被引：18

作者：

FOCHT, MW

SCHWARTZ, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.93818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：970 / 972

页数：3

共 13 条

[1]

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[2] PROTON-BOMBARDMENT IN INP [J].

DONNELLY, JP ;

HURWITZ, CE .

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[3] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS [J].

DYMENT, JC ;

NORTH, JC ;

DASARO, LA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :207-213

[4] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

DYMENT, JC ;

NORTH, JC ;

MILLER, BI ;

RIPPER, JE ;

DASARO, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&

[5] OPTIMUM PROTON ENERGY FOR DH LASERS DETERMINED BY INSITU MONITORING DURING BOMBARDMENT [J].

DYMENT, JC ;

SMITH, G .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :750-755

[6]

HOLDEN WS, COMMUNICATION

[7] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[8] RANGE OF PROTONS IN GAAS [J].

MATSUMURA, H ;

NAGATOMO, M ;

FURUKAWA, S ;

STEPHENS, KG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :121-123

[9]

PRUNIAUX BR, 1971, 2ND P INT C ION IMPL, P212

[10]

SCHWARTZ B, UNPUB

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