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SIMOX SOI FOR INTEGRATED-CIRCUIT FABRICATION
被引：10
作者：
HON, WL
机构：
来源：
IEEE CIRCUITS AND DEVICES MAGAZINE
|
1987年
/
3卷
/
04期
关键词：
SEMICONDUCTING SILICON - SEMICONDUCTOR DEVICE MANUFACTURE - SEMICONDUCTOR DEVICES;
MOS - Military Applications;
D O I：
10.1109/MCD.1987.6323126
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
The attributes of silicon-on-insulator technology using a high-dose oxygen-ion implantation, commonly known as SIMOX (Separation by IMplanted OXygen), are described. The discussion covers the preparation of SIMOX wafers; military applications; high-voltage applications; and submicron CMOS, Bi-CMOS, and bipolar applications.
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页码：6 / 11
页数：6
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