GENERATION MECHANISM OF MISFIT DISLOCATIONS IN IN1-XGAXAS1-YPY/INP DH STRUCTURE GROWN BY LPE

被引：11

作者：

KOMIYA, S

YAMAZAKI, S

KISHI, Y

UMEBU, I

KOTANI, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 02期

关键词：

D O I：

10.1016/0022-0248(83)90373-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：362 / 368

页数：7

共 14 条

[1] THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS [J].

BISARO, R ;

MERENDA, P ;

PEARSALL, TP .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :100-102

[2] AUGER PROFILE STUDY OF THE INFLUENCE OF LATTICE MISMATCH ON THE LPE INGAASP-INP HETEROJUNCTION INTERFACE [J].

FENG, M ;

COOK, LW ;

TASHIMA, MM ;

STILLMAN, GE ;

BLATTNER, RJ .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :697-699

[3] LATTICE-DEFECTS IN LPE INP-INGAASP-INGAAS STRUCTURE EPITAXIAL LAYERS ON INP SUBSTRATES [J].

ISHIDA, K ;

MATSUMOTO, Y ;

TAGUCHI, K .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 70 (01) :277-286

[4] LATTICE DEFORMATION AND MISORIENTATION OF INXGA1-X AS EPITAXIAL LAYERS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

KAWAMURA, Y ;

OKAMOTO, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4457-4458

[5] A NEW METHOD OF X-RAY DIFFRACTION TOPOGRAPHY USING MONOCHROMATIC DIVERGENT BEAMS MADE BY A CURVED CRYSTAL [J].

KOHRA, K ;

TAKANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :982-&

[6] INTERPRETATION OF DISLOCATION CONTRAST IN X-RAY TOPOGRAPHS OF GAAS1-XPX [J].

MADER, S ;

BLAKESLEE, AE ;

ANGILELLO, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4730-4734

[7] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS [J].

MATTHEWS, JW ;

MADER, S ;

LIGHT, TB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3800-&

[8] DISLOCATION VELOCITIES IN INDIUM-PHOSPHIDE [J].

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :793-794

[9] LPE GROWTH OF MISFIT DISLOCATION-FREE THICK IN1-XGAXAS LAYERS ON INP [J].

NAKAJIMA, K ;

KOMIYA, S ;

AKITA, K ;

YAMAOKA, T ;

RYUZAN, O .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1568-1572

[10] MISFIT DISLOCATION-FREE IN1-XGAXAS1-YPY-INP HETEROSTRUCTURE WAFERS GROWN BY LIQUID-PHASE EPITAXY [J].

NAKAJIMA, K ;

YAMAZAKI, S ;

KOMIYA, S ;

AKITA, K .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4575-4582

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