SI-DOPING EFFECT ON ELECTRICAL-PROPERTIES OF LEC-GAAS CRYSTALS

被引：6

作者：

FORNARI, R

ZANOTTI, L

ZUCCALLI, G

机构：

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1983年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0254-0584(82)90029-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：307 / 314

页数：8

共 16 条

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[8]

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[9] DETERMINATION OF FERMI-LEVEL EFFECT ON SI-SITE DISTRIBUTION IN GAAS-SI [J].

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[10] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

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